Ultrasonic Preparation of Graphene Flexible Transparent Conductive Film
Abstract: With the development of electronic components in the direction of miniaturization and lighter weight, graphene flexible transparent conductive films will be replaced by hard substrate transparent conductive films, so their research has attracted much attention. In this paper, the main preparation techniques of graphene flexible transparent conductive films and their shortcomings are reviewed. The latest research results in this field, ultrasonic atomization spray coating, are described.
Transparent conductive films are widely used in flat panel displays, solar cells, light emitting devices and other optoelectronic fields. In recent years, optical communication devices and solid-state lighting have been used to prepare transparent conductive films on flexible substrates, which have the advantages of being foldable, lightweight, non-brittle, easy to transport, easy production over large areas, and low investment in equipment. They can be widely used in the field of optoelectronics and become a New directions for the study of transparent conductive films. The graphene has high electron mobility at room temperature, excellent electrical conductivity, high transmittance in the visible and near-infrared light range, excellent thermal conductivity, stable chemical properties, excellent mechanical flexibility, and low manufacturing cost The advantages of the graphene film deposited on the flexible substrate can not only replace the conventional conductive film, but also have the flexible performance that the conventional conductive film does not have, and its application field will be very extensive.
Current methods for preparing graphene flexible transparent conductive films include vacuum evaporation, sputtering, and ion plating. The vacuum evaporation method obtains a thin grain size, a large resistivity, and a low visible light transmittance. The advantage of the sputtering method is that any substance can be sputtered, especially an element or a compound having a high melting point and a low vapor pressure. The adhesion between the thin film and the substrate is good, and the disadvantage is that the sputtering equipment is complicated; the main advantage of ion plating is that the deposition speed is high, a relatively uniform thin film can be prepared, and the disadvantage is that the low degree of ionization requires a very high acceleration voltage. A small amount of ions is not conducive to the reaction deposition.